NTE Electronics
TRANSISTOR NPN SILICON 65V IC=3A TO-60 CASE PO=13.5 WATT 175 MHZ RF POWER AMP/DRIVER
Part No:
NTE16002
RoHS:
Unknown
HTS:
85412900951
COO:
US
ECCN:
EAR99
Supplier Standard Pack:
1
Configuration:
Single
Dimension:
12.6 x 10.92 x 19.8(Max) mm
Material:
Si
Maximum Base Emitter Saturation Voltage:
1.5@5A@1A V
Maximum Collector Base Voltage:
65 V
Maximum Collector Emitter Saturation Voltage:
1@100mA@500mA V
Maximum Collector Emitter Voltage:
40 V
Maximum Collector Emitter Voltage Range:
40 to 50 V
Maximum DC Collector Current:
3 A
Maximum DC Collector Current Range:
2 to 8 A
Maximum Emitter Base Voltage:
4 V
Maximum Power Dissipation:
23000 mW
Maximum Transition Frequency:
400(Typ) MHz
Minimum DC Current Gain:
5@1A@5 V
Minimum DC Current Gain Range:
2 to 30
Mounting:
Stud
Number of Elements per Chip:
1
Operating Temperature:
-65 to 200 °C
Output Power:
13.5 W
Packaging:
N/A
Pin Count:
3
Screening Level:
N/A
Supplier Package:
N/A
Type:
NPN
Unit of Measure:
Per Each