5X SSS7N60A Samsung N-Channel Power MOSFET 600V 4A 1.2Ohm 48W TO-220F
Pack of 5Pcs SSS7N60A Samsung N-Channel Power MOSFET 600V 4A 1.2Ohm 48W TO-220F
Specification | |
---|---|
Polarity/Channel Type | N-CHANNEL |
Surface Mount | NO |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Terminals | 3 |
DS Breakdown Voltage-Min | 600 V |
Number of Elements | 1 |
Drain Current-Max (Abs) (ID) | 4 A |
Drain Current-Max (ID) | 4 A |
Drain-source On Resistance-Max | 1.2 Ω |
Avalanche Energy Rating (Eas) | 611 mJ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation-Max | 48 W |
Pulsed Drain Current-Max (IDM) | 16 A |
Transistor Element Material | SILICON |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Operating Temperature-Max | 150 °C |
Case Connection | ISOLATED |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Manufacturer | SAMSUNG SEMICONDUCTOR INC |
Part Package Code | TO-220F |
Package Description | FLANGE MOUNT, R-PSFM-T3 |
Pin Count | 3 |
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Packaging
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