1X FGA60N65SMD Onsemi Power IGBT 650V 60A 600W TO-3PN
1PCS FGA60N65SMD Onsemi Power IGBT 650V 60A 600W TO-3PN
Specification | |
---|---|
Base Product Number | FGA60N65 |
IGBT Type | Field Stop |
Technology | Si |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 120A |
Current - Collector Pulsed (Icm) | 180A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 60A |
Collector-Emitter Saturation Voltage | 1.9V |
Power - Max | 600W |
Pd - Power Dissipation | 600W |
Switching Energy | 1.54mJ (on), 450µJ (off) |
Gate Charge | 189nC |
Td (on/off) @ 25°C | 18ns/104ns |
Test Condition | 400V, 60A, 30Ohm, 1.1mH |
Reverse Recovery Time (trr) | 47ns |
Input Type | Standard |
Maximum Gate Emitter Voltage | -20V, 20V |
Gate-Emitter Leakage Current | 400nA |
Operating Temperature (Min) | -55°C |
Operating Temperature (Max) | 175°C |
Package / Case | TO-3P, SC-65-3, TO-3PN |
Supplier Device Package | TO-3P |
Mounting Type | Through Hole |
Configuration | Single |
Series | FGA60N65SMD |
Packaging | Tube |
Manufacturer | onsemi / Fairchild |
Product Type | IGBT Transistors |
Subcategory | IGBTs |
Unit Weight | 0.22 oz |
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Packaging
Our items are packaged according to their needs—some in ESD bags with pins secured in protective sponge, others in foam-enclosed boxes. For larger quantities, options include broken tubes for transistors or cartons. We welcome your suggestions for packaging preferences.