STP200N3LL STMicroelectronics N-Ch Power MOSFET 30V 120A 2.4mOhm 176W TO-220
2Pcs STP200N3LL STMicroelectronics N-Ch Power MOSFET 30V 120A 2.4mOhm 176W TO-220
Specification | |
---|---|
Manufacturer Package Code | TO-220AB |
Manufacturer | STMicroelectronics |
Drain-source breakdown voltage (V(BR)DSS) | 30 V |
Zero gate voltage drain current (IDSS) | 1 µA (max) at VGS = 0 V, VDS = 30 V; 10 µA (max) at VGS = 0 V, VDS = 30 V, TC = 125 °C |
Gate-body leakage current (IGSS) | ±100 nA (max) at VDS = 0 V, VGS = ±20 V |
Gate threshold voltage (VGS(th)) | 1 V (min), 2.5 V (max) at VDS = VGS, ID = 250 µA |
Static drain-source on-resistance (RDS(on)) | 2.15 mΩ (typ) at VGS = 10 V, ID = 60 A; 3.1 mΩ (max) at VGS = 4.5 V, ID = 60 A |
Drain-source voltage (VDS) | 30 V |
Gate-source voltage (VGS) | ±20 V |
Drain current (continuous) at TC = 25 °C (ID) | 200 A |
Drain current (continuous) at TC = 25 °C (ID) | 120 A (limited by package) |
Drain current (continuous) at TC = 100 °C (ID) | 120 A |
Drain current (pulsed) (IDM) | 480 A |
Total dissipation at TC = 25 °C (Ptot) | 176.5 W |
Single pulse avalanche energy (EAS) | 300 mJ |
Storage temperature range (Tstg) | -55 to 175 °C |
Operating junction temperature range (Tj) | -55 to 175 °C |
Thermal resistance junction-case (Rth(j-c) case) | 0.85 °C/W |
Thermal resistance junction-ambient (Rth(j-a) amb) | 62.5 °C/W |
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Packaging
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