1X 2MBI75VA-120-50 Fuji 1200V Dual IGBT Module 75A 390W
1 Unit of 2MBI75VA-120-50 Fuji 1200V Dual IGBT Module 75A 390W
Specification | |
---|---|
Collector-Emitter Voltage-Max | 1.2 kV |
Gate-Emitter Thr Voltage-Max | 7 V |
Collector Current-Max (IC) | 75 A |
Polarity/Channel Type | N-CHANNEL |
Surface Mount | NO |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
Number of Terminals | 7 |
Number of Elements | 2 |
Gate-Emitter Voltage-Max | 20 V |
Power Dissipation-Max (Abs) | 390 W |
Transistor Application | POWER CONTROL |
Transistor Element Material | SILICON |
Turn-off Time-Nom (toff) | 600 ns |
Turn-on Time-Nom (ton) | 600 ns |
VCEsat-Max | 2.4 V |
JESD-30 Code | R-XUFM-X7 |
Operating Temperature-Max | 175 °C |
Case Connection | ISOLATED |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Terminal Position | UPPER |
Manufacturer Entity | FUJITSU LTD |
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Packaging
Our items are packaged according to their needs—some in ESD bags with pins secured in protective sponge, others in foam-enclosed boxes. For larger quantities, options include broken tubes for transistors or cartons. We welcome your suggestions for packaging preferences.